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August 1999
MTD3055V*
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
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12 A, 60 V. R DS(ON) = 0.15 ? @ V GS = 10 V
Low gate charge.
Fast switching speed.
High performance technology for low R DS(ON) .
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? 1999 Fairchild Semiconductor Corporation
MTD3055V Rev. A
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